In the semiconductor industry, gold and electroless nickel plating are applied to reflector rings, reflector arrays and top chucks. Gold is used because of its reflectivity, conductivity and heat dissipation qualities. Electroless nickel is valued for its evenness and chemical resistance.

Unique Plating Technology for Microelectronics

For Use in 3G Mobile Phones, Bluetooth Devices, Radio Frequency Packages and Wireless Components. Unique Plating Technology Specifications Size: 4"(Square Wafers) Substrate Ceramic Metallization: Ti-Cu + EN / Cu (To prevent electromagnetics and corrosion) Sputtering Thickness: Ti: 10µm, Cu: 50µm Thickness: 3.5 - 100µm Technical Challenges Seed Layer + EN Layer 1: Sputtered Ti (PVD) Layer 2: Sputtered Cu (PVD) Layer 3: Electroless Ni Adhesion on Molding compound Seed Layer + Cu Sputtering of Titanium Oxide Copper Patterning Copper Pillars with Roundness via Hole Filling Unique Combination of PVD and Chmeical Plating Technique Via Hole Filling Please refer to the relevant pages Unique Capabilites，Nickel Plating，Copper Plating，PVD

Under Bump Metalisation (UBM)
	For Connecting a Semiconductor Device to the Packaging Substrate. Specifications Size: 4", 6", 8" (Round Wafer) Substrate: Ceramic, Al-Si Metallization: Ti, Cu, Ni, Au, Ag, Cr Technical Challenges To Provide Excellent Adhesion to Variety of Wafers. Metal Diffusion Prevention.

Plating Technology for Wafers

Used in LEDs and Semiconductor Wafers in wireless mobile telecommunications technology. Specifications Size: 3", 4", 5", 6", 8" (Round Wafer) 4" (Square Wafer) Substrate: Ceramic, Al-Si Metallization: Au, Black Ni, Au-Sn, Au-Ni, Si, Cu Thickness: 0.1 - 100µm Technical Challenges Encapsulation Plating on SAW Devices Copper / Black Nickel Multilayer Plating on (CSSP SAW) Filters Challenges Encapsulate over the Package, Protecting Against Humidity, Electromagnetic Induction and oxidation. Intensity of Black is Required as A Detector in Laser Marking. Cu Plating on SAW Devices Copper Plating on SAW Filters Even Thickness Distribution Au-Sn Alloy Plating On Wafer Limited Chemical Life Span, Color and Composition uniformity Wafer Au Plating Adhesion on Si/Al Alloy Materials, Surface Roughness Improvement on Roughness and Adhesion using PVD and Electroplating. 3 Layer Plating on Surface of SAW Device Copper Plating on SAW Filter Low Melting Point(280°C – 300°C) Good Surface Roughness of Ra = <0.05µm Please refer to the relevant pages Gold Plating，Nickel Plating，Copper Plating，Tin Plating

Plating Technology for RF Packages

RF Packages in Satellites, Base Stations and Other Communication Devices Specifications Substrate: Ceramic, Cu-Mo, Cu, Cu-W Metallization: Ni-Co / Au Thickness: 1.5 - 3.5µm Technical Challenges Chip is directly connected to the base Plate uniform Au （Ni±0.9μm Au±0.23μm）on 2 different thickness parts which separated by Ceramic. Selective Lids Plating on New Models of Holy Lids and Ceramics Please refer to the relevant pages Gold Plating，Nickel Plating，Copper Plating